Abstract

This paper studies the simulation results of a novel controller circuit design for non-volatile (NV) look-up tables (LUT) combined with an electrical model of a resistive random-access memory (RRAM)—an emerging non-volatile memory (NVM) device. The Write and Read schemes of the controller is tested for a 2x2 RRAM array. The selected RRAM successfully switches between low ‘0’ and high ‘1’ while the unselected the RRAM remain undisturbed, demonstrating the elimination of the intrinsic sneak-path current problem in RRAMs. Reading of a selected RRAM is also performed with agreeable results.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call