Abstract
Concerned work is solely dedicated to the optimized characteristics of Nanoscale vacuum channel TF (Truncated fin)-FinFET at gate length of 7 nm. NVCTF-FinFET has its own benefit, due to high immune to noise and temperature as compared to TF-FinFET. The working of device stood perfectly well in case of NVCTF-FinFET. When tested, we end up with 3 times less current variation w.r.t temperature, 3 times more efficiency, 104 times more amplifying power analysed at corresponding peak values. These results evident the performance enhancement of NVCTF-FinFET, if seen from analog point of view. When studied from the perspective of linearity for RFIC designs, we end up with enhancement in some figure of merits such as 3.5 times in 1-dB compression point, 4 times more IP3, 102 times in HD3 and around 105 times in IMD3 at corresponding peak values. As NVCTF-FinFET provided descent switching ratio and Vth at input voltage (<2 V), which could lead these transistors beyond Moore’s law. These simulation difference ultimately made NVCTF-FinFET, a significant candidate to high speed and noise reduction System on chip (SOCs) operations in outer space.
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