Analysis of a high-performance ultra-thin body ultra-thin box silicon-on-insulator MOSFET with the lateral dual-gates: featuring the suppression of the DIBL

Zhibiao Shao,Sufen Wei,Guohe Zhang,Cheng-Fu Yang,Li Geng

doi:10.1007/s00542-017-3532-4

Abstract

An inspiring UTBB SOI MOSFET structure with enhanced immunity to the drain-induced barrier lowering (DIBL) is analyzed. The structure includes the dual-gates in the lateral direction. The voltage difference is applied between the dual-gates, through which the electrostatic potential and the energy band along the channel are modified and the electrical performance is boosted. The electrical characteristics are investigated by measuring the electron concentration, the conduction band energy level, and the potential at the front-surface. The impact of the negative voltage bias applied to the right gate on the performance of the new device is studied, and compared to that of the conventional ultra-thin body ultra-thin box silicon-on-insulator (UTBB SOI) devices. The results reveal that the undesirable DIBL values are lower in this innovative device than that in the conventional UTBB SOI MOSFET.

Highlights

The ultra-thin body ultra-thin box (UTBB) SOI MOSFET with the lightly-doped channel is demonstrating a high advantage for ultimate MOSFET scaling because of its dramatic suppression of short-channel effects (SCEs) (Young 1989; Grenouillet et al 2013), and its superiority of low-power high-speed application (Haond 2014; Stephane and Thomas 2016)
The impact of the negative voltage bias applied to the right gate on the performance of the new device is studied, and compared to that of the conventional ultra-thin body ultra-thin box silicon-on-insulator (UTBB SOI) devices
The results reveal that the undesirable drain-induced barrier lowering (DIBL) values are lower in this innovative device than that in the conventional UTBB SOI MOSFET

Summary

Introduction

The ultra-thin body ultra-thin box (UTBB) SOI MOSFET with the lightly-doped channel is demonstrating a high advantage for ultimate MOSFET scaling because of its dramatic suppression of short-channel effects (SCEs) (Young 1989; Grenouillet et al 2013), and its superiority of low-power high-speed application (Haond 2014; Stephane and Thomas 2016). The DIBL characterizes the physical phenomena that in the short channel devices operating in the subthreshold region, the potential barrier between the source and the channel is lowered because of the bias voltage applied to drain. It causes excess carriers injecting into the channel and resulting in an increased subthreshold current. The results of this work are instructive for design and application of the novel UTBB SOI devices

Proposed device

Analysis of electrical characteristics

Conclusion