Abstract
In this study, we have proposed a comb-shaped field plate for use in a 4H-SiC Schottky barrier diode; this field plate was expected to improve the electric field distribution in the device and provide a higher breakdown voltage than conventional field plate structures. The main principle of the proposed structure is to distribute the inner electric field in the blocking mode through a stepped oxide structure formed by several trenches. The proposed structure was optimised using a simulation, and we fabricated and measured a number of devices to evaluate the performance of the proposed structure. The proposed device's breakdown voltage was 39% better than that of a SiC Schottky barrier diode containing conventional field plates.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
