Abstract
This paper presents an analysis of indium arsenide–gallium antimonide (InAs/GaSb) (110)-grown superlattices for use as infrared detectors. The analysis shows that InAs/GaSb superlattices grown on (110)-oriented substrates can be grown thinner, have higher mobilities, longer diffusion lengths, greater quantum efficiencies, and gains, thus higher responsivities, than those grown on (100)-oriented substrates for the same long wavelength threshold. Based on growth studies to date, (110) superlattices should also have higher minority carrier lifetimes, lower noise, and lower residual carrier densities, thus higher detectivities. The calculated electronic structure of a (110)-oriented superlattice based on the 8×8 envelope-function approximation shows the bands to be anisotropic and the oscillator strengths to be polarization dependent. Recommended layer widths for specific absorption thresholds are calculated.
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