Abstract
The radiation resistance of individual InGaP and GaAs sub-cells is assessed as a function of base doping under low-energy proton irradiation. It is found that InGaP sub-cells with low base doping are the most radiation tolerant. However, in GaAs, carrier removal leads to a rapid degradation in sub-cells with low base doping and the most radiation hard sub-cell is achieved using a linearly graded base doping profile.
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