Abstract

The efficiency potential of chalcopyrite and kesterite solar cells including CIGSe (CuInGaSe2), CIGS (CuInGaS2), CZTS (Cu2ZnSnS4) and CZTSSe [Cu2ZnSn(S,Se )4] solar cells is discussed based on external radiative efficiency (ERE), open-circuit voltage loss, fill factor loss, non-radiative recombination and resistance loss. CIGSe cells achieve efficiency potential of 26.8% and 27.5% by improving the ERE from around 1% to 10% and 20%, respectively. CIGS and CZTS(Se) cells achieve the efficiency potential of 25% and 22%, respectively, by improvement in ERE from around 1 × 10−4% to 3%–5%. The effects of non-radiative recombination and resistance loss upon the properties of wide-bandgap CIGSe, CIGS and CZTS(Se) cells are discussed. In the case of wide-bandgap CIGSe cells, lattice mismatching between the buffer layer and CIGSe active layer and deep-level defects are thought to originate from non-radiative recombination loss. CIGS and CZTS(Se) cells are shown to have lower ERE and higher resistance loss compared to that of CIGSe cells.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call