Analysis, Design, and Implementation of the Class-E ZVS Power Amplifier With MOSFET Nonlinear Drain-to-Source Parasitic Capacitance at any Grading Coefficient

Abstract

In this paper, analytical expressions for waveforms and design relationships are derived for the class-E power amplifier with the MOSFET nonlinear drain-to-source parasitic capacitance under the subnominal operation, i.e., only zero-voltage switching (ZVS) condition, for any grading coefficient m of the MOSFET body junction diode and 50% duty ratio. Only the MOSFET nonlinear drain-to-source parasitic capacitance is used for the analysis of the class-E ZVS power amplifier, and its nonlinearity is determined by the grading coefficient m. The switch voltage waveform does not satisfy the class-E ZVS switching condition when only the linear shunt capacitance is considered. The grading coefficient m is used as an adjustment parameter that provides accurate design to satisfy the given output power and peak switch voltage simultaneously. Therefore, the grading coefficient m is the important parameter to satisfy the class-E ZVS condition and given design specifications, which is the most important result in this paper. Additionally, the output power capability and maximum operating frequency are affected by the grading coefficient m. The analytical expressions are obtained by considering the grading coefficient m as an adjustment parameter, which is validated by PSpice simulations and laboratory experiments. The measurement and PSpice simulation results agreed with the analytical expressions quantitatively, which denotes the usefulness and effectiveness of our obtained analytical expressions.