Analysis, Design, and Experimental Results for a High-Frequency ZVZCS Galvanically Isolated PSFB DC-DC Converter over a Wide Operating Range Using GaN-HEMT

Abstract

This paper investigates the potential of the emerging gallium nitride (GaN) high-electron mobility transistors (HEMT) power devices to meet certain power conversion challenges. The advantages of utilizing GaN HEMT transistors in a high-frequency, high-power isolated DC-DC topology are explored experimentally. Using the GaN HEMT’s parasitic elements, e.g., output capacitance, and the leakage inductance of the transformer, a soft switching zero-voltage zero-current switching (ZVZCS) phase shift converter is proposed. Accordingly, the freewheeling current is terminated, and soft switching is realized for most of the primary and secondary active devices. Furthermore, without using any additional circuitry, the overshoot voltage across the bridges of active rectifier diodes is clamped at their voltage level. In addition, a high-frequency power transformer is optimized to minimize the overall transformer losses (e.g., winding and core losses). Combined the conductor types, e.g., litz wire and copper foil, shows good electrical and thermal performance by reducing the AC and DC resistance. Finally, a 5 kW, 100–250 kHz prototype is built and tested. The experimental results show a conversion efficiency of up to 98.18% for the whole converter.