Abstract
Silicon Carbide (SiC)-based Bi-Directional Switches (BDS) have great potential in the construction of several power electronic circuits including multi-level converters, solid-state breakers, matrix converters, HERIC (high efficient and reliable inverter concept) photovoltaic grid-connected inverters and so on. In this paper, two issues with the application of SiC-based BDSs, namely, unwanted turn-on and parasitic oscillation, are deeply investigated. To eliminate unwanted turn-on, it is proposed to add a capacitor (CX) paralleled at the signal input port of the driver IC (integrated circuit) and the capacitance range of CX is also analytically derived to guide the selection of CX. To mitigate parasitic oscillation, a combinational method, which combines a snubber capacitor (CJ) paralleled with the JFET (Junction Field Effect Transistor) and a ferrite ring connected in series with the power line, is proposed. It is verified that the use of CJ mainly improves the turn-off transient and the use of a ferrite ring damps the current oscillation during the turn-on transient significantly. The effects of the proposed methods have been demonstrated by theoretical analysis and verified by experimental results.
Highlights
Wide Band-Gap (WBG) power devices, which provide a system-level performance benefit with high-voltage blocking capability, high-temperature operation and high-frequency switching performance, have been employed in various power electronic converter applications [1,2,3,4].The switching behavior of WBG devices, such as Silicon Carbide (SiC) and Gallium Nitride (GaN) FETs (Field Effect Transistors), has attracted considerable research attention
Unwanted Turn-On (UTO) phenomenon in the application of high-speed SiC devices has multiple adverse effects. It may result in undamped or divergent oscillations which are detrimental to the reliable operation of power electronic circuits
This paper reports a deep investigation into the UTO behavior of a developed
Summary
Wide Band-Gap (WBG) power devices, which provide a system-level performance benefit with high-voltage blocking capability, high-temperature operation and high-frequency switching performance, have been employed in various power electronic converter applications [1,2,3,4].The switching behavior of WBG devices, such as Silicon Carbide (SiC) and Gallium Nitride (GaN) FETs (Field Effect Transistors), has attracted considerable research attention. The shoot-through is due to the unintentionally turn-on behavior of the inactive switch in a phase leg that ought to be in the off-state [5]. This issue poses serious reliability concerns since it results in a short circuit with unsustainably high current flowing through the power devices. This behavior has different nomenclature in different literature, such as crosstalk [5], parasitic turn-on [6,7], cross-turn-on [8] and false turn-on [9]
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