Analysis and simulation of the frequency response of MOSFETs with uniform and/or local oxide degradation

Abstract

A new approach for modeling the a.c. performance of MOSFETs is presented. This approach is based on a transmission line model which takes into account the effects of interface traps. The model is then solved using SPICE in order to evaluate the MOSFET input admittance and its frequency dependence. Besides the consideration of the interface trap effects, this approach has the advantage of being capable of treating random interface charge fluctuations and local interface damage induced by hot carrier injection into the gate oxide. The channel response is studied using this approach in strong inversion as well as in the weak inversion regime which has recently found several interesting applications. Finally, simulation results are discussed and compared with experimental measurements in order to evaluate the accuracy of our modeling procedure.