Abstract
A novel device, lateral PIN photodiode gated by transparent electrode (LPIN PD-GTE) fabricated on fully-depleted SOI film was proposed. ITO film was adopted in the device as gate electrode to reduce the light absorption. Thin Si film was fully depleted under gate voltage to achieve low dark current and high photo-to-dark current ratio. The model of gate voltage was obtained and the numerical simulations were presented by ATLAS. Current-voltage characteristics of LPIN PD-GTE obtained in dark (dark current) and under 570 nm illumination (photo current) were studied to achieve the greatest photo-to-dark current ratio for active channel length from 2 to 12 μm. The results show that the photo-to-dark current ratio is 2.0×107, with dark current of around 5×10−4 pA under VGK=0.6 V, PIN=5 mW/cm2, for a total area of 10 μm×10 μm in fully depleted SOI technology. Thus, the LPIN PD-GTE can be suitable for high-grade photoelectric systems such as blue DVD.
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