Abstract
Monolithic Active Pixel Sensors (MAPS) are widely used in consumer imaging applications. They owe their success to the inherent features of the CMOS process they are fabricated with i.e. low cost, simplicity, and low power consumption, which allows the design of high resolution detectors with integrated signal processing and data reduction. However, the signal collection time is dominated by diffusion and is relatively slow. The aim of this paper is the analysis and simulation of a novel MAPS structure that can improve the performances in terms of speed of charge collection and hence radiation tolerance.
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