Abstract
The performance and characteristics of an AlGaN/GaN Single Quantum Well Transistor Laser with 336 nm wavelength at room temperature has been analyzed in this paper for the first time. A charge control model which is based on coupled rate equations has been used for modeling. Using simulation, The Optical Frequency Response of this device has been exploited and the bandwidth of 25 GHz and Resonance Peak of 4 dB at 15 GHz has been achieved for this device. The base width in this work is 225 nm with 15 nm Quantum Well width.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
