Abstract
In this paper, the electrical characteristics of a junctionless double-gate metal-oxide-semiconductor field-effect-transistor (JL DG MOSFET) and that of inversion-mode double-gate metal-oxide-semiconductor field-effect transistor (IM DG MOSFET) were investigated. Using extensive device simulations, we compared the two devices by using the following analog performance parameters: the transconductance, gate capacitance and unity gain frequency. Furthermore, the operation of the JL DG MOSFET inverter was compared with that of the IM DG MOSFET. The simulated propagation delay of the JL DG MOSFET inverter was found to be about 0.52 ps compared with the 1.45 ps achievable with the IM DG MOSFET inverter.
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