Analysis and simulation for current–voltage models of thin-film gated SOI lateral PIN photodetectors

Abstract

Based on the semiconductor-device structure and equations, we analyze the operation principles of thin-film gated silicon-on insulator (SOI) Lateral PIN (LPIN) photodetectors, and obtain current–voltage models. With 800nm film thickness and 8μm channel length, we validate these models by two-dimensional (2D) Atlas numerical measurements and electrical simulations, including carriers distributions and current–voltage characteristics. In fully-depleted condition, our results predict the internal quantum efficiency as high as 97% at 400nm wavelength, a very low dark current around 1pA and a high ratio of more than 107 between illuminated to dark current with low-voltage operation. Optimizing the performances of photodetectors, our models have highly potential applications in optical storage systems.