Abstract
Mg-doped GaN films are grown on Si(111) substrates using plasma-assisted molecular beam epitaxy. Plasma diagnosis and analysis predict operating conditions that minimize the ion bombardment during the growth. The ion exposure strongly affects the photoluminescence intensity associated with the Mg acceptor level in GaN. The drift mechanism of the nitrogen ions from the electron cyclotron resonance region is discussed. By minimizing the ion drift during growth, intense photoluminescence is obtained from the films.
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