Analysis and optimal design of semi-insulator passivated high-voltage field plate structures and comparison with dielectric passivated structures

Abstract

The influences of the field oxide thickness and the junction depth on the breakdown voltage of semi-insulator passivated planar junctions with the field plate are investigated using a 2D simulator. This is done by analyzing the two extreme situations: the planar junction with an infinitely long field plate, and the deep-depleted MOS structure having a finite size. This rather unconventional approach has offered a new physical insight into the role of the metal field plate and has revealed that the severe field crowding associated with a shallow planar junction can be greatly suppressed by using a thin field oxide. The breakdown voltage and the optimal field oxide thickness of the semi-insulator passivated field plate structures remain nearly constant over a wide variation in the junction depth, and therefore such structures are attractive for realizing high-voltages in vertical devices fabricated by low-voltage IC technology. The influences of the field plate width and the inter-electrode spacing are studied by the conventional approach, and a simple and widely applicable design guideline is given for both the nonpunchthrough and the punchthrough type structures. The influence of the surface charge in the range 0 to 10/sup 12/ cm/sup -2/ is found to be negligible. The semi-insulator passivated and the dielectric passivated field plate structures are compared under optimal conditions. This suggests that the semi-insulator passivated structures are attractive when thin field oxide and a shallow planar junction are needed and that the dielectric passivated structures are better when compactness is desired.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>