Abstract
After detailed analysis of the influence of non-ideal factors (such as device mismatches, voltage dependency of carrier mobility and temperature-varying effect) upon the performance of the double-MOSFET block including non-linearities cancelling, a circuit model for the double-MOSFET block via device physics approach is proposed. The effects of some non-ideal factors upon the performance of the block are analysed and simulated, based upon the proposed model, which is justified by SPICE-2 simulations.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.