Analysis and modeling of two-dimensional piezoelectric semiconductor shell theory

Abstract

In recent years, there has been a surge in research on piezoelectric semiconductors (PSs). However, studies specifically focused on two-dimensional PS structures remain scarce. In this paper, based on the principle of the virtual work method, the condition of charge continuity and the first-order thickness shear theory, we have established a two-dimensional model to investigate the electromechanical properties of two-dimensional PS shells. The basic field quantities, including the displacement, the electric potential and the carrier concentration perturbations were Fourier expanded along the width direction, and then the governing equations were successfully derived. The differential quadrature method was used to obtain numerical results for the PS shells with different loading modes and structural configurations. It was found that the inhomogeneous shear strain S13 is the key to the potential change in the PS shell structure. The emergence of the potential barriers and wells in the shell structure of PS is well explained. In addition, the position of the potential barriers can be modulated by varying the magnitude of the load, which provides a reference for the design of thin-film devices.