Abstract
Fabrication and structure of a novel IPD (Integrated Passive Device) inductor are presented. In this paper, IPD inductor has been simulated by 3D EM simulator software, HFSS (High Frequency Structure Simulator). Performance of this inductor over 100 MHz to 20 GHz frequency range has been demonstrated on a glass substrate. We obtain higher Q factor (Qmax about 25-40) in electrical simulated analysis. Moreover, we study several important variations (Number of Turn, Space, Width, Radius) in IPD for spiral inductor. The trends of insertion loss, inductance value and Q factor have been investigated and summarized for IPD database. Finally, an equivalent circuit model has been presented and optimized by this paper.
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