Abstract
Improving the performance of superconducting qubits and resonators generally results from a combination of materials and fabrication process improvements and design modifications that reduce device sensitivity to residual losses. One instance of this approach is to use trenching into the device substrate in combination with superconductors and dielectrics with low intrinsic losses to improve quality factors and coherence times. Here, we demonstrate titanium nitride coplanar waveguide resonators with mean quality factors exceeding two million and controlled trenching reaching 2.2 μm in the silicon substrate. Additionally, we measure sets of resonators with a range of sizes and trench depths and compare these results with finite-element simulations to demonstrate quantitative agreement with a model of interface dielectric loss. We then apply this analysis to determine the extent to which trenching can improve resonator performance.
Highlights
Improving the performance of superconducting qubits and resonators generally results from a combination of materials and fabrication process improvements and design modifications that reduce device sensitivity to residual losses
Dielectric loss associated with two-level systems (TLSs) at material interfaces is a major contributor limiting coherence times and quality factors in superconducting qubit and resonator devices
We present TiN coplanar waveguide (CPW) resonators with quality factors exceeding two million fabricated using a process capable of controlled trenching in the silicon substrate
Summary
(Received 28 September 2017; accepted 16 January 2018; published online 5 February 2018) Improving the performance of superconducting qubits and resonators generally results from a combination of materials and fabrication process improvements and design modifications that reduce device sensitivity to residual losses.
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