Abstract
In this article, a nanosecond pulse generation circuit is designed and fabricated based on a commercial Si-p-i-n rectifier diode using the DSRD principle. The circuit is composed of four parallel stacks with a 3-kV pulse output and a rise time of less than 2 ns. Each stack contains four diodes in a series. The working principle and main parameters of the circuit are analyzed by Pspice, and the simulation results are consistent with the experimental results. Switching cutoff speed, reverse voltage, offset voltage, and the topological circuit structure of connecting the rectifier diodes affect the amplitude and rise time of the output pulse.
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