Analysis and Design of high-K Material Nanowire Transistor for Improved Performance

Abstract

MOSFET is not meeting the expectations of industry due to its high power consumption and dissipation, high leakage current. Due to various challenges faced while further scaling of MOSFET for the different applications, exploration of other novel devices is going on. Nanowire transistor is the potential device which can meet power requirement and reduce leakage current while scaling. Nanowire transistor with high K oxide material is having better gate controllability which further makes it more promising device for low power applications. Dielectric material i.e. SiO2 has been installed on nanowire transistor and fair comparison in terms of Power Vs gate voltage (Vg) and Drain current (Id) Vs gate voltage (Vg) is done on cogenda TCAD simulator which is further compared with high K material i.e HfO2 for its improved performance. As compared to low K dielectric material, improvement of 9.51% in power has been observed using high K dielectric material.