Analysis and control of BJT latch in fully depleted floating-body submicron SOI MOSFETs

J.-Y Choi,J.G Fossum

doi:10.1109/sossoi.1990.145689

Analysis and control of BJT latch in fully depleted floating-body submicron SOI MOSFETs

J.-Y Choi, J.G Fossum

https://doi.org/10.1109/sossoi.1990.145689

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Publication Date: Oct 2, 1990

Citations: 8

Affiliation: University of Florida

#Silicon On Insulator MOSFETs #Silicon On Insulator + Show 8 more

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Abstract

The floating-body bipolar junction transistor (BJT) effects in fully depleted 0.5- mu m n-channel SOI (silicon on insulator) MOSFETs are analyzed, based on two-dimensional device simulations and on device measurements. PISCES simulations of the BJT-induced breakdown and latch phenomena are done, and parametric dependences are examined to give physical insight for optimal design. The analysis further relates the DC-breakdown and latch mechanisms in the fully depleted SOI MOSFET to the actual BJT-induced problems in an operating SOI CMOS circuit. A comprehensive understanding of floating-body effects is attained. >

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