Abstract
In this research, the analysis of statistical variations in subthreshold MOSFET's high frequency characteristics defined in terms of gate capacitance and transition frequency, have been shown and the resulting comprehensive analytical models of such variations in terms of their variances have been proposed. Major imperfection in the physical level properties including random dopant fluctuation and effects of variations in MOSFET's manufacturing process, have been taken into account in the proposed analysis and modeling. The up to dated comprehensive analytical model of statistical variation in MOSFET's parameter has been used as the basis of analysis and modeling. The resulting models have been found to be both analytic and comprehensive as they are the precise mathematical expressions in terms of physical level variables of MOSFET. Furthermore, they have been verified at the nanometer level by using 65~nm level BSIM4 based benchmarks and have been found to be very accurate with smaller than 5 % average percentages of errors. Hence, the performed analysis gives the resulting models which have been found to be the potential mathematical tool for the statistical and variability aware analysis and design of subthreshold MOSFET based VHF circuits, systems and applications.
Highlights
Subthreshold region operated MOSFET has been adopted in various VHF circuits, systems and applications such as passive wireless Microsystems [1], low power receiver for wireless PAN [2], low power LNA [3], [4] and RF front-end for low power mobile TV applications [5] etc
The performances of these VHF apparatuses are mainly determined by two major high frequency characteristics of intrinsic subthreshold MOSFET entitled gate capacitance, Cg and transition frequency, fT which is known as unity gain frequency
Imperfection in the physical level properties of MOSFET for example random dopant fluctuation along with those caused by variations in the manufacturing process of the device such as line edge roughness and gate length random fluctuation etc., cause the variations in MOSFET’s electrical characteristics such as drain current and transconductance etc
Summary
Subthreshold region operated MOSFET has been adopted in various VHF circuits, systems and applications such as passive wireless Microsystems [1], low power receiver for wireless PAN [2], low power LNA [3], [4] and RF front-end for low power mobile TV applications [5] etc. Imperfection in the physical level properties of MOSFET for example random dopant fluctuation along with those caused by variations in the manufacturing process of the device such as line edge roughness and gate length random fluctuation etc., cause the variations in MOSFET’s electrical characteristics such as drain current and transconductance etc These variations are crucial in the statistical and variability aware design of MOSFET based applications. There are many previous studies devoted to such variations in electrical characteristics such as [1], [6], [7], [8], [9], [10], [11], [12] which subthreshold region operated MOSFET has been focused in [1], [6], [10], [11], [12] These studies did not mention anything about the variations in Cg and fT even though they exist and greatly affect the high frequency performances of the MOSFET based circuits and systems. The proposed analysis and modeling gives the results which have been found to be the potential mathematical tool for the statistical and variability aware analysis and design of subthreshold MOSFET based VHF circuits, systems and applications
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