Abstract
In this article, the effects of the parameters of GaN HEMTs and Si mosfet s and the load conditions on the radiated electromagnetic interference (EMI) are analyzed based on the compositions of the equivalent noise voltage sources. These compositions include the rising and falling edges of the switching voltages, the zero-voltage-switching voltage drops and the parasitic ringing. The radiated EMI from two identical dual-active bridge converters with GaN HEMTs and Si mosfet s is investigated and compared. Experiments were conducted to validate the analysis.
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