Analysis and 3D TCAD simulations of single-qubit control in an industrially-compatible FD-SOI device

Abstract

In this study, 3D simulations are introduced to analyze electric-dipole spin resonance (EDSR) for a spin qubit defined in a 28nm-node Ultra-Thin Body and Buried oxide (UTBB) Fully-Depleted Silicon-On-Insulator (FD-SOI) device operated at cryogenic temperatures. The device under consideration is designed to be compatible with STMicroelectronics’ standard fabrication techniques. The simulations predict the experimental and device parameters (e.g. drive amplitude, leakage, and Rabi frequency) required to make EDSR a viable means of qubit control before the device is fabricated. This work highlights how 3D TCAD tools which can simulate quantum-mechanical effects can help steer the design of quantum devices.