Abstract
The techniques of ion backscattering with channeling and X-ray rocking curves have been used to analyze Al 0.88Ga 0.12As/GaAs strained-layer-superlattices (SLS). Detailed information on the depth profiles of strain, composition and crystalline quality were obtained on these structures before and after silicon ion implantation. For implantations with an energy of 200 keV and doses up to 5 × 10 15 cm −2, no intermixing among GaAs and AlGaAs sublayers was observed by backscattering measurements. However, considerable damage occurred with a dose as low as 7 × 10 12 cm −2, which extended deeper than the projected range of the implanted ions. Corresponding measurements of strain were also made by X-ray rocking curves. Interpretations of such strain profiles suggest that, in the initial stages of ion implantation, the strain in Al 0.88Ga 0.12As sublayers is released.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
