ANALYSES OF C-V CHARACTERISTICS OF MFIS DEVICE UNDER HIGH AND LOW FREQUENCY

Abstract

ABSTRACT Metal ferroelectric insulator semiconductor (MFIS) structure using PZT and SiO2 as ferroelectric and insulator materials was fabricated. The high frequency and low frequency C-V curves under different applied voltage were measured. Based on physical and mathematics analyses of MFIS device the predictions of C-V characteristic under high and low frequency were given in detail. The distribution of charge in ferroelectric layer was also considered. The C-V Curve was divided into six different regions under low frequency. Comparing with experimental results, the detailed analyses were presented in this work. The influences of trapped charges on Low frequency C-V curves of MFIS were also considered. The similar analyses are processed in high frequency state. The predictions of frequency on C-V curves are confirmed by our experimental results. Furthermore, the influences of saturation of ferroelectric capacitor and applied voltage on C-V curves were also investigated in this paper.