Abstract
Progressive optimization of the surface passivation of Si solar cells requires access to the elemental composition and chemical bonding characteristics of ultrathin layers and buried interfaces on textured or structured surfaces. The passivation of the rear side of passivated emitter and rear solar cells, for instance, can be realized through AlOx/SiNx stacks, which are known to provide an additional field effect passivation on top of the chemical surface passivation. Herein, transmission electron microscopy is used at locally prepared cross‐sections of such stacks. Electron energy loss spectroscopy is used to extract depth‐resolved information of elemental composition and chemical bonding at nanometer scale. With this, the interfacial excess O fraction, which is crucial for the field effect passivation, is successfully determined for the first time for AlOx passivation layer systems on industrially produced Si solar cells.
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