Analogue of electromagnetically-induced transparency with ultra-narrow bandwidth in a silicon terahertz metasurface

Abstract

Achieving an ultra-narrow bandwidth analogue of electromagnetically induced transparency (EIT) in bright–bright mode coupling metasurface requires a large contrast of the Q factor and small wavelength detuning between the two coupled modes. Here, by coupling a toroidal dipole (TD) high-Q Fano resonance and a low-Q magnetic dipole (MD) mode, we numerically demonstrated a high Q factor analogue of EIT on an all-silicon metasurface in the terahertz regime. The Q factor of Fano resonance and consequent EIT can be easily adjusted by the spacing between the air holes. By adjusting the radii of the air holes, the thickness of the silicon wafer, or the lattice constant of the metasurface, EIT-like response exhibiting a very high group refractive index and a large group delay was achieved. The proposed EIT metasurface is easy to fabricate and has potential applications in the fields of narrowband filtering and slow-light based devices.