Analog/RF Performance Analysis of GAA-GNR Tunnel Field-Effect Transistor (TFET)

Abstract

AbstractIn this paper, we present a gate all round tunneling field-effect transistor (GAA TFET) with graphene nanoribbon (GNR) that improves DC and RF performance. The GAA TFET with GNR (GAA-GNR TFET) has an ultrathin tunneling layer on the source side wall and a 5 nm wavelength GNR layer. The analysis of the GAA-GNR TFET was discussed using computer-aided design (TCAD) simulation technology. Simulations show that the proposed structure provides higher drain currents (Id), steeper mean threshold oscillations, and also very good RF performance. A detailed study of the analog/RF performance parameters includes gate capacitance, conductance (gm), gain bandwidth product (GBP), transmission time (τ), and cutoff frequency (fT) of the evaluated device. The TCAD simulation results show the improved DC and analog/RF performance of the proposed GAA-GNR TFET compared to the conventional GAA TFET. Single-port GAA-GNR TFET over 0 V with high ON current density, conductivity (gm), cut-off frequency (fT), gain bandwidth product (GBP), and low oscillation frequency the maximum (fmax) is 38 µA/µm, 7.8 µs/µm, 96 GHz, 19 GHz, and 16.3 THz when Vgs is equal to 1.2 V.KeywordsTunnel field effect transistorDrain currentComputer aided designGNRGate-all-ground