Abstract
Analog/RF performance of gate stack dual material double gate (GSDMDG) and graded channel gate stack double gate (GCGSDG) has been examined by ATLAS device simulation, including quantum confinement. We propose two new analog/RF figures of merit, 1) gain frequency product (GFP) which combines both low- and high-frequency aspects of device operation, 2) gain transconductance frequency product (GTFP) that includes both the switching speed and intrinsic gain of the device and is very useful for circuit design. The GCGSDG shows higher transconductance frequency product (TFP) and is a good candidate for high speed switching applications. However, GSDMDG outperforms other devices in terms of GTFP.
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