Abstract
In this study, the authors propose a novel MgZnO/CdZnO Quadruple-Gate Field Effect Transistor (QG-FET). The analog/RF and linearity distortion performance of the proposed QG-FET has been analysed and compared with conventional AlGaN/GaN QG-FET having identical physical dimensions. The performance parameters including drain current (IDS), gate capacitance (Cgs), output-conductance (gd), transconductance (gm1), transconductance generation factor (TGF), intrinsic-gain (dB), cut-off frequency (fT), transconductance frequency product (TFP), first and second order derivatives of gm1 (i.e., gm2 and gm3), third order intermodulation distortion (IMD3), third order input intercept point (IIP3), and extrapolated input voltages (VIP2 and VIP3) have been calculated. The consequences of variations in physical parameters of proposed QG-FET viz., thickness of oxide layer (tox), channel length (CL), and doping concentration (Nd) on the analog/RF and linearity distortion parameters are analyzed and compared with conventional AlGaN/GaN QG-FET. It has been revealed that MgZnO/CdZnO QG-FET yields higher IDS, gm1, TGF, intrinsic gain (dB), fT, and TFP than conventional AlGaN/GaN QG-FET with respect to different values of tox, CL, and Nd.
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