Abstract
Antiferroelectric analogous (Pb0.92Sr0.05La0.02)(Zr0.7Sn0.25Ti0.05)O3 (PSLZSnT) ceramics were prepared by the solid-state sintering method by introducing a Y2O3-coating via the self-combustion method. The synthesized Y2O3-doped PSLZSnT ceramics present pseudo-cubic structure and rather uniform microstructural morphology accompanied by relatively small grain size. Excellent energy-storage performance is obtained in the Y2O3-doped PSLZSnT ceramics, in which the value of the energy-storage density presents a linearly increasing trend within the electric field measurement range. Such excellent performance is considered as relating to the rather pure perovskite structure, high relative density accompanied by relatively small grain size, and the antiferroelectric-like polarization-electric field behavior.
Highlights
With the development of miniature and compact electronic and electrical devices, and concerning sustainable development of society, designing for high power and energy-storage density dielectric materials becomes an urgent requirement [1,2]
Ceramics were prepared by the traditional ceramic processing by introducing Y2 O3 -coating via the self-combustion method [14]
Introducing the Y2 O3 -coating via the self-combustion method was to thoroughly utilize its effect on inhibiting grain growth [12] since materials preparation processing presents essential influences on the crystal structure and materials’ performance [4,8,13,15,16]
Summary
With the development of miniature and compact electronic and electrical devices, and concerning sustainable development of society, designing for high power and energy-storage density dielectric materials becomes an urgent requirement [1,2]. Existing dielectric ceramics provide potentiality for high-energy-storage applications due to the fast charge/discharge capability, mature ceramic technique, and diversified composition selection, in which high dielectric constant, high dielectric breakdown strength, large polarization, and low hysteresis loss are desirable [2,3,4]. Antiferroelectric materials have gained continuous attention due to their double ferroelectric hysteresis loop characteristics and low dielectric loss, which tend to exhibit superior energy-storage density as compared with their ferroelectric counterparts [5,6,7]. Y doping greatly decreases grain size of the (Pb0.87 Ba0.1 La0.02 )(Zr0.65 Sn0.3 Ti0.05 )O3
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