Abstract
In this paper, analog/radio frequency (RF) electrical characteristics of triple material gate stack-graded channel double gate-Junctionless (TMGS-GCDG-JL) strained-Si (s-Si) MOSFET with fixed charge density is analyzed with the help of Sentaurus TCAD. By varying the various device parameters, the analog/RF performance of the proposed TMGS-GCDG-JL s-Si MOSFET is evaluated in terms of transconductance-generation-factor (TGF), early voltage, voltage gain, unity-power-gain frequency (fmax), unity-current-gain frequency (ft), and gain-transconductance frequency product (GTFP). The results confirm that the proposed TMGS-GCDG-JL s-Si MOSFET has superior analog/RF performance compared to gate stack-graded channel double gate-junctionless (GS-GCDG-JL) s-Si device. However, the proposed MOSFET has less transconductance and less output conductance when compared with the GS-GCDG-JL s-Si device in above threshold region, and reverse trend follows in sub-threshold region.
Highlights
FET is evaluated in terms of transconductance-generation- rial
The results confirm that the proposed TMGS-GCDG- vice operates in nano-scaled regime, fixed charges are JL s-Si MOSFET has superior analog/RF performance created at Oxide/s-Si (SiO2/s-Si) interface due to the compared to gate stack-graded channel double gate- lateral electric field in s-Si MOSFETs [8]-[9]
TFP of the proposed TMGS-GCDG-JL s-Si MOSFET is more than the GS-GCDG-JL s-Si MOSFET in above subthreshold region, and reverse trend follows in weak inversion region
Summary
Since the strain is developed into silicon channel, the energy-band diagram of the silicon material is affected because of the biaxial-tension. The changes in energy band gap, electron affinity, and effective masses of carrier in s-Si material are formulated as shown below [24, 25]. β 0.075X where VT denotes the thermal voltage, NV,Si and NV,sβSi represent density of states in the valence band, mβh,Si and mβh,sβSi denote the effective masses of hole in silicon and strained-silicon, respectively. Both flat band voltage and barrier potential of the source (drain) to channel decrease simultaneously [26]. The proposed device with the fixed charges is simulated using the TCAD [27].
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