Analog/RF Performance of Graded Channel Gate Stack Triple Material Double Gate Strained-Si MOSFET with Fixed Charges

Abstract

The performances of analog/RF parameters of a graded channel gate stack triple material double gate (GCGS-TMDG) strained-Silicon (s-Si) MOSFET with fixed charges are analyzed by using Sentaurus TCAD simulator. For the GCGS-TMDG s-Si MOSFET, analog/RF parameters, such as early voltage, transconductance generation factor (TGF), voltage gain, unity gain frequency (ft), gain frequency product (GFP), transconductance frequency product (TFP), and gain transconductance frequency product (GTFP), are estimated for various device parameters (i.e., strain in the silicon channel, fixed charge density with damaged length, and thicknesses of different high-k dielectric materials). The simulated data shows that the proposed GCGS-TMDG s-Si MOSFET obtains lower values of drain current and output conductance compared to the graded channel gate stack double gate (GCGS-DG) s-Si MOSFET. Besides, the GCGS-TMDG s-Si MOSFET provides superior performances of early voltage, ft, GFP, TFP, and GTFP in comparison with the GCGS-DG s-Si MOSFET in strong inversion region, and vice-versa in weak inversion region.