Abstract
In this work the combination of the dynamic threshold voltage (DTMOS) with multiple gate structure has been studied through three-dimensional numerical simulations for different channel doping concentrations. The threshold voltage and subthreshold slope will be studied. Furthermore, important figures of merit for the analog performance such as transconductance-over-drain current, output conductance, Early voltage and intrinsic voltage gain will be analysed. It is demonstrated that DTMOS triple-gate device exhibit the best electrical characteristics and for higher channel doping concentration present the best analog performance than Bulk triple-gate. For low doped devices (1015 cm-3) the analog performance is similar in both devices.
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