Abstract
In this paper an IGZO memristor with multiple states and analog tuning extended capability is reported. The device has a planar structure and is fabricated by magnetron sputtering on glass substrate. The device resistance could be gradually increased and decreased within the range of one order of magnitude. Larger resistance changes are also possible but they are mostly irreversible. The obtained memristor looks promising to be used as electronic synapse in hardware implemented artificial neural networks or for applications in analog computing and cryptography.
Highlights
Memristors are devices that can store information as different resistive states
Analogue memristors could be employed for biologically inspired computing, as synapses in artificial neural networks implemented in hardware
In this paper we report on IGZO based memristors with multiple states and extended capability of analog tuning
Summary
Memristors are devices that can store information as different resistive states. Analogue memristors could be employed for biologically inspired computing, as synapses in artificial neural networks implemented in hardware. In this case, the different synaptic weights are stored as different resistive states. In this paper we report on IGZO based memristors with multiple states and extended capability of analog tuning. IGZO based memristors are attractive as could be integrated with TTFTs and allow for the realization of transparent memories and neuromorphic devices. Wang et al [11] reported an IGZO memristor based on oxygen ion migration and diffusion with synaptic and memory functions, which further possessed a “learning-experience” behavior. Kimura et al [12] studied the utilization of an IGZO thin film device as an artificial synapse based on the continuous decrease of the electric conductance by flowing electrical current in the device due to electrons trapping
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