Abstract
The paper focuses on the design of a CMOS analog ASIC for temperature-drift compensation of a high sensitivity piezoresistive micro-machined porous silicon pressure sensor to avoid analog-to-digital conversion, limit chip area and reduce power consumption. For implementing the compensation circuitry, multilayered perceptron (MLP) based artificial neural network (ANN) with inverse delayed function model of neuron has been optimized. The temperature drift compensation CMOS ASIC has been implemented to make porous silicon pressure sensor an excellent SMART porous silicon pressure sensor. Using the compensation circuit, the error in temperature-drift has been minimized from 93% to about 0.5% as compared to 3% using conventional neuron model in the temperature range of 25---80°C. The entire circuit has been designed using 0.35 μm AMS technology model and simulated using mentor graphics ELDO Simulator.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.