Analog and Digital Bipolar Resistive Switching in Co-Al-Layered Double Hydroxide Memristor.

Yanmei Sun,Li Li,Keying Shi

doi:10.3390/nano10112095

Abstract

We demonstrate a nonvolatile memristor based on Co–Al-layered double hydroxide (Co–Al LDH). We also introduce a memristor that has a hexazinone-adsorbing Co–Al LDH composite active layer. Memristor characteristics could be modulated by adsorbing hexazinone with Co–Al LDHs in the active layer. While different, Co–Al LDH-based memory devices show gradual current changes, and the memory device with small molecules of adsorbed hexazinone undergo abrupt changes. Both devices demonstrate programmable memory peculiarities. In particular, both memristors show rewritable resistive switching with electrical bistability (>105 s). This research manifests the promising potential of 2D nanocomposite materials for adsorbing electroactive small molecules and rectifying resistive switching properties for memristors, paving a way for design of promising 2D nanocomposite memristors for advanced device applications.

Highlights

For the past few years, more and more attention has been paid to memristors in the field of electronic devices [1,2,3,4,5,6,7,8,9,10,11,12]
The dry film was impregnated in 5 mg/mL hexazinone aqueous solution for 5 min and dried at 50 ◦C overnight to form the Co–Al LDH-adsorbed hexazinone active layer
Memristors based on Co–Al LDHs or Co–Al LDH-adsorbed hexazinone as resistive switching active layers were fabricated on indium tin oxide (ITO)-coated glass substrates

Summary

Introduction

For the past few years, more and more attention has been paid to memristors in the field of electronic devices [1,2,3,4,5,6,7,8,9,10,11,12]. They have been investigated extensively for commercialization on account of their quick response and data processing, and low energy consumption. The mechanism of analog-type memristors is still unclear and controversial

Methods

Results

Conclusion