Abstract
This paper presents calculation results of performance of III-N-based laser diode and its arrays (bars) with various package modifications. We adjusted our 2D thermal-electrical model to room-temperature continuous-wave operating characteristics of nitride-based edge-emitting laser fabricated in the Laboratory of Institute of High Pressure Physics. The impact of chip width, substrate thickness, thickness of p-type gold electrode, number of emitters and emitter-to-emitter distance on output power limits of nitride laser diode is investigated. Computational analysis of output power limits of III-N-based laser diode with various package modifications
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