Abstract

This work contains analysis of a SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> dielectric geometry influence on a epitaxial lateral overgrowth (ELO) thin films and solar photo-conversion efficiency. Layers used in the experiment were obtained in LPE (Liquid Phase Epitaxy) process in the same thermodynamical conditions: starting temperature of growth: 1193K, temperature difference ΔT=60K, ambient gas: Ar, metallic solvent: Sn+Al and in a different cooling rates: 0,25K/min and 0,75K/min. Also we used various dielectric masks with a different geometry: grid opened in SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> layer along <110> and <112> directions on a p+ boron doped (111) silicon substrate, where silicon dioxide covers from 70% up to 90% of the silicon surface. Results of the analyzes show correlation between efficiency and percentage of SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> coverage and velocity of crystallization on obtained solar cells.

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