Abstract
Solid solutions Mo1–xNbxS2 (x = 0, 0.05, 0.10, and 0.15) crystallizing in the hexagonal structure 2H-MoS2 are synthesized. The samples are characterized by powder X-ray diffraction (XRD) and Raman spectroscopies, X-ray photoelectron spectroscopy (XPS), and quantum chemical calculations (DFT). The changes occurring in the electronic properties of high-resistivity semiconductor MoS2 and indicating metallic behavior of obtained solid solutions Mo1–xNbxS2 are not accompanied by substantial changes in the atomic photoelectron spectra.
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