Abstract
AbstractThe Si(2p) and C(ls) XPS spectra of a‐Si1‐xCx: H films are studied before and after argon ion etching. Two specimens, with x = 0.26 and x = 0.39 are prepared by glow discharge decomposition of SiH4 and CH4 gases diluted in hydrogen. The as‐prepared specimens show adsorbed free carbon and silicon oxides which are substantially removed by ion etching. Both specimens indicate a preference for bonding between Si and C atoms, even after the randomizing effect of the ions. The specimen with x = 0.39 shows essentially complete chemical order while the other specimen shows some carbon not bonded to silicon as well as a substantial amount of silicon not bonded to carbon. The results agree with electron diffraction observations on the same specimens.
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