Abstract
X-ray photoelectron spectroscopic (XPS) core-level spectra of MoO3/SiO thin films are presented. The effects of changes in composition, substrate temperature during deposition and annealing on the binding energy of Mo(3d) and Si(2p) core lines in mixed films are compared with those of MoO3 and SiO. Appreciable changes in Mo(3d) peak positions and slight changes in Si(2p) peak positions are observed. The change in binding energy of the Mo(3d) doublet may be attributed to the effective incorporation of silicon ions in an MoO3 lattice which may cause the molybdenum orbital to be a little less tightly bound. This helps in the internal electron transfer from the oxygen (2p) to the molybdenum (4d) level as a result of which the molybdenum is readily changed to lower oxidation states during heat treatment. XPS spectra show that the position of the Si(2p) core state shifts monotonically with increasing oxygen concentration from the value of 101.8 to 102.6 eV.
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