Abstract
In this contribution, the design of an X-Band MMIC Doherty Power Amplifier (DPA) in GaAs technology is presented. The DPA, based on 2250μm of total gate periphery, will be deeply described with the aim to highlight each design choice. The nonlinear simulation results shown a saturated output power and drain efficiency greater than 30dBm and 47%, respectively. Moreover, in the 6dB of output power back-off, an AM/AM distortion lower than 0.5dB is also demonstrated. Furthermore, 15% of bandwidth is obtained (8.8-10.2 GHz) in which the drain efficiency is maintained greater than 44.5%, with a peak of 50.1% at 10GHz. Finally, the reported preliminary small signal measurements gave a first proof of the design success.
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