An X‐band CMOS power amplifier with a driver stage using a shot‐through current rejection technique

Abstract

ABSTRACTIn this study, we design an X‐band switching‐mode CMOS power amplifier using 0.13‐μm RF CMOS process. The power amplifier is composed of driver and power stages. In this study, we focus on the power consumption of the driver stage. To minimize power consumption, we propose a shot‐through current rejection technique for the Class‐D amplifier used as a driver stage of the CMOS power amplifier. We split the gate bias of the NMOS and PMOS of the Class‐D amplifier using DC‐blocking capacitors to control the shot‐through current. From the measured results, we successfully prove the feasibility of the proposed technique. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:1159–1162, 2014