An X-ray topography study of the dendritic web silicon growth process

Abstract

In this study, transmission X-ray topography was used for investigating the nature of dislocation networks in as-grown dendritic web silicon ribbons. We were able to correlate minority carrier diffusion length with the configuration of the networks that are strongly affected by twin planes lying midway across the web thickness. Analysis of the networks is also useful in providing information regarding regions of high stress levels associated with a given growth environment.